Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states
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چکیده
منابع مشابه
Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states
Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn2SnO4-sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol-gel approach followed by post-annealing. The back-to-back bipolar RS properties were observed in the Ohmic contact two-terminal devices based on indi...
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Available online 17 September 2012
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2013
ISSN: 2045-2322
DOI: 10.1038/srep03249